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  1. Ê×Ò³ >  ½â¾ö·½°¸ >  [Ô­´´] On Semi NCP51705 6A¸ßËÙSiC MOSFETÇý¶¯·½°¸

[Ô­´´] On Semi NCP51705 6A¸ßËÙSiC MOSFETÇý¶¯·½°¸

¹Ø¼ü´Ê£ºµçÔ´¹ÜÀí SiC MOSFET AC£¯DCת»»Æ÷ DC£¯DCת»»Æ÷ Âí´ïÇý¶¯ ʱ¼ä£º2018-11-19 10:20:17       ×÷ÕߣºOn Semi       À´Ô´£ºÖеçÍø

On Semi¹«Ë¾µÄNCP51705Çý¶¯Æ÷ÊÇÉè¼ÆÓÃÀ´Çý¶¯SiC MOSFET¾§Ìå¹Ü,ΪÁ˵õ½¾¡¿ÉÄܵ͵¼Í¨ËðºÄ,Çý¶¯Æ÷ÄÜÇý¶¯SiC MOSFETÆ÷¼þµÄ×î´ó¿ÉÔÊÐíÕ¤¼«µçѹ,Ô´µçÁ÷ºÍ³ÁµçÁ÷Ϊ6A,²¢ÌṩÖØÒªµÄ±£»¤¹¦ÄÜÈç»ù±¾µçÔ´µÄǷѹËøס¼àÊӺͻùÓÚÇý¶¯µç·µÄ½áεÄÈȹضÏ,Ö÷ÒªÓÃÔÚÇý¶¯SiC MOSFET¾§Ìå¹Ü,¹¤ÒµÄæ±äÆ÷,Âí´ïÇý¶¯ºÍPFC,AC£¯DCת»»Æ÷ºÍDC£¯DCת»»Æ÷.±¾ÎĽéÉÜÁËNCP51705Ö÷ÒªÌØÐÔ,ÄÚ²¿¿òͼ,µÍ±ß¿ª¹ØÅäÖÃͼºÍÓ¦Óõç·,ÒÔ¼°NCP51705 Mini ÆÀ¹À°åºÍNCP51705 Mini SMDÆÀ¹À°åÖ÷ÒªÌØÐÔ,µç·ͼ,²ÄÁÏÇåµ¥ºÍPCBÉè¼Æͼ.

The NCP51705 driver is designed to primarily drive SiC MOSFETtransistors. To achieve the lowest possible conduction losses, thedriver is capable to deliver the maximum allowable gate voltage to theSiC MOSFET device. By providing high peak current during turn−onand turn−off, switching losses are also minimized. For improvedreliability, dV£¯dt immunity and even faster turn−off, the NCP51705can utilize its on−board charge pump to generate a user selectablenegative voltage rail.

For full compatibility and to minimize the complexity of the biassolution in isolated gate drive applications the NCP51705 alsoprovides an externally accessible 5 V rail to power the secondary sideof digital or high speed opto isolators.

The NCP51705 offers important protection functions such asunder−voltage lockout monitoring for the bias power and thermalshutdown based on the junction temperature of the driver circuit.

NCP51705Ö÷ÒªÌØÐÔ:

• High Peak Output Current with Split Output Stages to allowindependent Turn−ON£¯Turn−OFF Adjustment;
♦ Source Capability: 6 A
♦ Sink Capability: 6 A
• Extended Positive Voltage Rating for Efficient SiC MOSFETOperation during the Conduction Period
• User−adjustable Built−in Negative Charge Pump for Fast Turn−offand Robust dV£¯dt Immunity
• Accessible 5 V Reference£¯Bias Rail for Digital Oscillator Supply
• Adjustable Under−Voltage Lockout
• Desaturation Function
• Thermal Shutdown Function (TSD)
• Small & Low Parasitic Inductance QFN24 Package

NCP51705µäÐÍÓ¦ÓÃ:

• Driving SiC MOSFET
• Industrial Inverters, Motor Drivers
• PFC, AC to DC and DC to DC Converters

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NCP51705 Mini ÆÀ¹À°å

This document describes the use and applications for theNCP51705 SiC driver mini EVB. The EVB is designed ona four layer PCB and includes the NCP51705 driver and all the necessary drive circuitry. The EVB also includes anon−board digital isolator and the ability to solder anyMOSFET or SiC MOSFET in a T0247 high voltagepackage. The EVB does not include a power stage and isgeneric from the point of view that it is not dedicated to anyparticular topology. It can be used in any low−side orhigh−side power switching application. For bridgeconfigurations two or more of these EVBs can be configuredin a totem pole type drive configuration. The EVB can beconsidered as an isolator+driver+T0247 discrete module.

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NCP51705 Mini SMDÆÀ¹À°å

This document describes the use and applications for the NCP51705SiC driver mini SMD EVB. The EVB is designed on a four layer PCBand includes the NCP51705 driver and all the necessary drivecircuitry. The EVB also includes an on−board digital isolator and the ability to solder any MOSFET or SiC MOSFET in a TO−247 highvoltage package. The EVB does not include a power stage and isgeneric from the point of view that it is not dedicated to any particulartopology. It can be used in any low−side or high−side power switchingapplication. For bridge configurations two or more of these EVBs canbe configured in a totem pole type drive configuration. The EVB canbe considered as an isolator+driver+TO−247 discrete module.

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ͼ20.NCP51705 SiC EVBδ°²×°Ê±PCBµÄ²âÊÔÅäÖÃͼ
ÏêÇéÇë¼û:
https://www.onsemi.cn/pub/Collateral/NCP51705-D.PDF
ºÍhttps://www.onsemi.cn/pub/Collateral/EVBUM2590-D.PDF
ÒÔ¼°https://www.onsemi.cn/pub/Collateral/EVBUM2528-D.PDF
NCP51705-D.PDF
EVBUM2528-D.PDF
EVBUM2589-D.PDF

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